BSC120N03LSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Continuous Drain Current (ID) :

12A

Rise Time :

2.2ns

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

5

Factory Lead Time :

26 Weeks

Number of Pins :

8

Turn-Off Delay Time :

12 ns

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

12m Ω @ 30A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

28W

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Lead Free :

Contains Lead

Series :

OptiMOS™

Pin Count :

8

Transistor Element Material :

SILICON

ECCN Code :

EAR99

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Pbfree Code :

No

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Max Dual Supply Voltage :

30V

Package / Case :

8-PowerTDFN

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

2.7 ns

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

12A Ta 39A Tc

Fall Time (Typ) :

2.2 ns

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 15V

Published :

2013

Mounting Type :

Surface Mount

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.2V @ 250µA

JESD-30 Code :

R-PDSO-F5

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

2.5W Ta 28W Tc

Mount :

Surface Mount

Radiation Hardening :

No

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)