BR25S640FVT-WE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Write Cycle Time-Max (tWC) :

5ms

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Operating Mode :

SYNCHRONOUS

Memory Format :

EEPROM

Mount :

Surface Mount

ECCN Code :

EAR99

Write Protection :

Hardware

Data Retention Time-Min :

40

Factory Lead Time :

16 Weeks

Mounting Type :

Surface Mount

Endurance :

1000000 Write/Erase Cycles

Packaging :

Tape and Reel (TR)

Supply Voltage :

1.8V

Operating Temperature :

-40°C~85°C TA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Memory Type :

Non-Volatile

Memory Size :

64Kb 8K x 8

Write Cycle Time - Word, Page :

5ms

Density :

64 kb

Length :

4.4mm

Voltage - Supply :

1.7V~5.5V

Number of Terminations :

8

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Lead Free :

Lead Free

Height Seated (Max) :

1.2mm

Base Part Number :

BR25S640

Number of Pins :

8

Memory Interface :

SPI

Terminal Position :

Dual

Number of Functions :

1

Qualification Status :

Not Qualified

Memory Width :

8

Width :

3mm

Interface :

SPI, Serial

Terminal Pitch :

0.65mm

Supply Voltage-Min (Vsup) :

1.7V

Supply Voltage-Max (Vsup) :

5.5V

Serial Bus Type :

SPI

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Clock Frequency :

20MHz

Standby Current-Max :

0.000002A

Published :

2010

RoHS Status :

ROHS3 Compliant