BR25L160F-WE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Data Retention Time-Min :

40

ECCN Code :

EAR99

Write Cycle Time-Max (tWC) :

5ms

Packaging :

Tape and Reel (TR)

Endurance :

1000000 Write/Erase Cycles

Published :

2013

Nominal Supply Current :

3mA

Number of Terminations :

8

Lead Free :

Lead Free

Write Cycle Time - Word, Page :

5ms

Standby Current-Max :

0.000002A

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Memory Size :

16Kb 2K x 8

Write Protection :

HARDWARE/SOFTWARE

Serial Bus Type :

SPI

Time@Peak Reflow Temperature-Max (s) :

10

Width :

4.4mm

Operating Temperature :

-40°C~85°C TA

Memory Width :

8

Terminal Pitch :

1.27mm

Base Part Number :

BR25L160

Terminal Finish :

TIN COPPER

Contact Plating :

Copper, Tin

Length :

5mm

Radiation Hardening :

No

Clock Frequency :

5MHz

Supply Voltage :

2.5V

JESD-609 Code :

e2

Terminal Position :

Dual

Pin Count :

8

Voltage - Supply :

1.8V~5.5V

Height Seated (Max) :

1.6mm

Mounting Type :

Surface Mount

Interface :

SPI, Serial

Density :

16 Kb

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Memory Type :

Non-Volatile

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Supply Voltage :

5V

Memory Interface :

SPI

Number of Functions :

1

Number of Pins :

8

Memory Format :

EEPROM

Mount :

Surface Mount

Access Time :

70 ns