BR25L080FV-WE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Memory Format :

EEPROM

Supply Voltage-Min (Vsup) :

1.8V

Pbfree Code :

yes

Pin Count :

8

Published :

2010

Length :

4.4mm

Write Protection :

Hardware

Memory Interface :

SPI

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Write Cycle Time - Word, Page :

5ms

Memory Size :

8Kb 1K x 8

Terminal Pitch :

0.65mm

Voltage - Supply :

1.8V~5.5V

Serial Bus Type :

SPI

ECCN Code :

EAR99

Width :

3mm

HTS Code :

8542.32.00.51

Memory Type :

Non-Volatile

Supply Voltage :

2.5V

Endurance :

1000000 Write/Erase Cycles

Contact Plating :

Copper, Tin

Density :

8 kB

Package / Case :

8-LSSOP (0.173, 4.40mm Width)

Time@Peak Reflow Temperature-Max (s) :

10

Operating Supply Voltage :

5V

Standby Current-Max :

0.000002A

JESD-30 Code :

R-PDSO-G8

Operating Temperature :

-40°C~85°C TA

Mount :

Surface Mount

Write Cycle Time-Max (tWC) :

5ms

Clock Frequency :

5MHz

JESD-609 Code :

e2

Interface :

SPI, Serial

Number of Functions :

1

Base Part Number :

BR25L080

Radiation Hardening :

No

Memory Width :

8

Supply Current-Max :

0.003mA

Terminal Finish :

Tin/Copper (Sn/Cu)

Organization :

1KX8

Lead Free :

Lead Free

Data Retention Time-Min :

40

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Height Seated (Max) :

1.25mm

Number of Terminations :

8