BR25L080FV-WE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Length :

4.4mm

Mounting Type :

Surface Mount

Memory Size :

8Kb 1K x 8

Clock Frequency :

5MHz

Supply Voltage-Min (Vsup) :

1.8V

Packaging :

Tape and Reel (TR)

Data Retention Time-Min :

40

Standby Current-Max :

0.000002A

Pbfree Code :

yes

Operating Supply Voltage :

5V

Supply Current-Max :

0.003mA

Height Seated (Max) :

1.25mm

ECCN Code :

EAR99

Write Cycle Time - Word, Page :

5ms

Memory Width :

8

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G8

Density :

8 kB

Interface :

SPI, Serial

Time@Peak Reflow Temperature-Max (s) :

10

Memory Type :

Non-Volatile

Memory Format :

EEPROM

Serial Bus Type :

SPI

Write Cycle Time-Max (tWC) :

5ms

Endurance :

1000000 Write/Erase Cycles

Lead Free :

Lead Free

Memory Interface :

SPI

Organization :

1KX8

Package / Case :

8-LSSOP (0.173, 4.40mm Width)

Radiation Hardening :

No

Number of Terminations :

8

Write Protection :

Hardware

Operating Temperature :

-40°C~85°C TA

Width :

3mm

Pin Count :

8

Terminal Position :

Dual

Supply Voltage :

2.5V

RoHS Status :

ROHS3 Compliant

Terminal Pitch :

0.65mm

Terminal Finish :

Tin/Copper (Sn/Cu)

HTS Code :

8542.32.00.51

Number of Functions :

1

Base Part Number :

BR25L080

Voltage - Supply :

1.8V~5.5V

JESD-609 Code :

e2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Contact Plating :

Copper, Tin

Mount :

Surface Mount