BR25L040FV-WE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Write Protection :

Hardware

Length :

4.4mm

Density :

4 kb

Terminal Position :

Dual

Operating Supply Voltage :

5V

Width :

3mm

Memory Type :

Non-Volatile

Organization :

512X8

Height Seated (Max) :

1.25mm

Package / Case :

8-LSSOP (0.173, 4.40mm Width)

Mounting Type :

Surface Mount

Voltage - Supply :

1.8V~5.5V

JESD-609 Code :

e2

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

8

Interface :

SPI, Serial

Terminal Pitch :

0.65mm

Pbfree Code :

yes

Operating Mode :

SYNCHRONOUS

JESD-30 Code :

R-PDSO-G8

Write Cycle Time-Max (tWC) :

5ms

Pin Count :

8

Memory Interface :

SPI

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

HTS Code :

8542.32.00.51

Supply Voltage :

2.5V

Memory Size :

4Kb 512 x 8

Base Part Number :

BR25L040

Data Retention Time-Min :

40

Supply Voltage-Min (Vsup) :

1.8V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Copper, Tin

Endurance :

1000000 Write/Erase Cycles

Write Cycle Time - Word, Page :

5ms

Factory Lead Time :

6 Weeks

ECCN Code :

EAR99

Mount :

Surface Mount

Clock Frequency :

5MHz

Memory Format :

EEPROM

Published :

2010

Terminal Finish :

Tin/Copper (Sn/Cu)

Standby Current-Max :

0.000002A

Memory Width :

8

Serial Bus Type :

SPI

Number of Functions :

1

Operating Temperature :

-40°C~85°C TA

Supply Current-Max :

0.003mA