BR25L010FVM-WTR

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Pbfree Code :

yes

Endurance :

1000000 Write/Erase Cycles

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Write Cycle Time - Word, Page :

5ms

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

ECCN Code :

EAR99

Memory Format :

EEPROM

Terminal Finish :

Tin/Copper (Sn97.5Cu2.5)

Memory Type :

Non-Volatile

Memory Interface :

SPI

Supply Voltage :

2.5V

Package / Case :

8-VSSOP, 8-MSOP (0.110, 2.80mm Width)

Interface :

SPI, Serial

Standby Current-Max :

0.000002A

Published :

2010

Length :

2.9mm

Write Cycle Time-Max (tWC) :

5ms

Operating Supply Voltage :

5V

Operating Temperature :

-40°C~85°C TA

Terminal Pitch :

0.65mm

Serial Bus Type :

SPI

JESD-609 Code :

e2

Clock Frequency :

5MHz

Access Time :

70 ns

Terminal Position :

Dual

Lead Free :

Lead Free

Density :

1 kb

Number of Functions :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Write Protection :

Hardware

Number of Pins :

8

Voltage - Supply :

1.8V~5.5V

Data Retention Time-Min :

40

Memory Size :

1Kb 128 x 8

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Memory Width :

8

Height Seated (Max) :

0.9mm

Contact Plating :

Copper, Tin

Base Part Number :

BR25L010

Nominal Supply Current :

3mA