BR25H640FVT-2CE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Memory Size :

64Kb 8K x 8

Standby Current-Max :

0.00001A

Organization :

8KX8

Length :

4.4mm

Number of Functions :

1

Memory Interface :

SPI

Memory Density :

65536 bit

Endurance :

1000000 Write/Erase Cycles

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G8

Clock Frequency :

10MHz

Supply Current-Max :

0.0055mA

Operating Mode :

SYNCHRONOUS

Data Retention Time-Min :

100

Terminal Pitch :

0.65mm

Supply Voltage :

5V

Voltage - Supply :

2.5V~5.5V

Factory Lead Time :

16 Weeks

Parallel/Serial :

Serial

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Supplies :

3/5V

Memory Width :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Supply Voltage-Min (Vsup) :

4.5V

Memory Type :

Non-Volatile

Mounting Type :

Surface Mount

Write Protection :

HARDWARE/SOFTWARE

Series :

Automotive, AEC-Q100

Packaging :

Cut Tape (CT)

Serial Bus Type :

SPI

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Write Cycle Time-Max (tWC) :

4ms

Write Cycle Time - Word, Page :

4ms

Number of Terminations :

8

Width :

3mm

Height Seated (Max) :

1.2mm

Memory Format :

EEPROM

Supply Voltage-Max (Vsup) :

5.5V

Operating Temperature :

-40°C~125°C TA

Additional Feature :

ALSO OPERATES AT 2.5V WITH 5MHZ

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED