BF511,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Noise Figure :

1.5dB

HTS Code :

8541.21.00.75

JESD-30 Code :

R-PDSO-G3

Published :

1997

Terminal Form :

Gull wing

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Configuration :

Single

Terminal Position :

Dual

Frequency :

100MHz

Surface Mount :

yes

Operating Temperature (Max) :

150°C

Additional Feature :

LOW NOISE

Power Dissipation-Max (Abs) :

0.25W

Current Rating (Amps) :

30mA

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

Depletion Mode

DS Breakdown Voltage-Min :

20V

Qualification Status :

Not Qualified

FET Technology :

JUNCTION

Transistor Type :

N-Channel JFET

Pin Count :

3

Current - Test :

5mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

0.4 pF

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Voltage - Test :

10V

Base Part Number :

BF511

Drain Current-Max (Abs) (ID) :

0.03A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Voltage - Rated :

20V