BF517E6327HTSA1
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- Mfr.Part #
- BF517E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.025A SOT23
- Stock
- 10,974
- In Stock ：
- 10,974
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 2.5V
- Max Collector Current :
- 25mA
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 20V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 280mW
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 15V
- Collector-Base Capacitance-Max :
- 0.75pF
- Max Power Dissipation :
- 280mW
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Configuration :
- Single
- Published :
- 2011
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Transition Frequency :
- 2000MHz
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Frequency :
- 2.5GHz
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 2mA 1V
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Current - Collector (Ic) (Max) :
- 25mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- ECCN Code :
- EAR99
- Datasheets
- BF517E6327HTSA1
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BF517E6327HTSA1 Overview
This device has a DC current gain of 40 @ 2mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 2.5V.As you can see, the part has a transition frequency of 2000MHz.A maximum collector current of 25mA volts is possible.
BF517E6327HTSA1 Features
the DC current gain for this device is 40 @ 2mA 1V
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 2.5V
a transition frequency of 2000MHz
BF517E6327HTSA1 Applications
There are a lot of Infineon Technologies
BF517E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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