BF422RL1G
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- Mfr.Part #
- BF422RL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 250V 0.05A TO92
- Stock
- 10,440
- In Stock ：
- 10,440
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2005
- Additional Feature :
- EUROPEAN PART NUMBER
- Base Part Number :
- BF422
- Max Collector Current :
- 50mA
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Current Rating :
- 50mA
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Frequency :
- 60MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 250V
- Collector Emitter Voltage (VCEO) :
- 250V
- Transistor Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 830mW
- Gain Bandwidth Product :
- 60MHz
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- hFE Min :
- 50
- Pin Count :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- 250V
- ECCN Code :
- EAR99
- Transition Frequency :
- 60MHz
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Power Dissipation :
- 830mW
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 250V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Datasheets
- BF422RL1G
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BF422RL1G Overview
DC current gain in this device equals 50 @ 25mA 20V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50mA current rating.As a result, the part has a transition frequency of 60MHz.In extreme cases, the collector current can be as low as 50mA volts.
BF422RL1G Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 60MHz
BF422RL1G Applications
There are a lot of ON Semiconductor
BF422RL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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