BDW53D-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

500μA

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

120V

Case Connection :

COLLECTOR

Packaging :

Tube

Pin Count :

3

ECCN Code :

EAR99

Transistor Type :

NPN - Darlington

Max Power Dissipation :

2W

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e1

Vce Saturation (Max) @ Ib, Ic :

4V @ 40mA, 4A

Element Configuration :

Single

Collector Base Voltage (VCBO) :

120V

Operating Temperature :

-65°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Max Collector Current :

4A

Base Part Number :

BDW53

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A 3V

Collector Emitter Breakdown Voltage :

120V

Polarity :

NPN

JEDEC-95 Code :

TO-220AB

Power - Max :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

SWITCHING

Mount :

Through Hole

Power Dissipation :

40W

Radiation Hardening :

No

Pbfree Code :

yes

Number of Terminations :

3

Published :

1993

Collector Emitter Saturation Voltage :

2.5V

Number of Elements :

1