BD895A-S

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Mfr.Part #
BD895A-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 45V 8A TO220
Stock
3,375
In Stock :
3,375

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 4A 3V
Collector Emitter Voltage (VCEO) :
45V
Base Part Number :
BD895
Pbfree Code :
yes
Number of Terminations :
3
Mounting Type :
Through Hole
Package / Case :
TO-220-3
JESD-609 Code :
e1
Terminal Finish :
TIN SILVER COPPER
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN - Darlington
Current - Collector Cutoff (Max) :
500μA
Polarity :
NPN
Power - Max :
2W
Max Power Dissipation :
2W
Collector Base Voltage (VCBO) :
45V
Packaging :
Tube
Case Connection :
COLLECTOR
JEDEC-95 Code :
TO-220AB
Radiation Hardening :
No
Mount :
Through Hole
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
5V
Operating Temperature :
-65°C~150°C TJ
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
2.8V @ 16mA, 4A
Element Configuration :
Single
Pin Count :
3
Max Collector Current :
8A
Published :
1993
JESD-30 Code :
R-PSFM-T3
Collector Emitter Saturation Voltage :
2.5V
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
45V
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD895A-S from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD895, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, BD895A-S pinout, BD895A-S datasheet PDF, BD895A-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD895A-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD895A-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BD895A-S Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 4A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.8V @ 16mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.

BD895A-S Features


the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.8V @ 16mA, 4A
the emitter base voltage is kept at 5V


BD895A-S Applications


There are a lot of Bourns Inc.
BD895A-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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