BD788

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Mfr.Part #
BD788
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 60V 4A TO126
Stock
15,550
In Stock :
15,550

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
Height :
6.35mm
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
60V
Pin Count :
3
Gain Bandwidth Product :
50MHz
Time@Peak Reflow Temperature-Max (s) :
40
Weight :
4.535924g
Packaging :
Bulk
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Power Dissipation :
15W
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 3V
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Width :
6.35mm
Voltage - Rated DC :
-60V
Polarity/Channel Type :
PNP
REACH SVHC :
No SVHC
Element Configuration :
Single
Collector Base Voltage (VCBO) :
80V
Operating Temperature :
-65°C~150°C TJ
Published :
2000
Factory Lead Time :
2 Weeks
Emitter Base Voltage (VEBO) :
6V
Surface Mount :
No
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
60V
Number of Elements :
1
Frequency :
50MHz
Current Rating :
-4A
Transition Frequency :
50MHz
Pbfree Code :
yes
Current - Collector Cutoff (Max) :
100μA
Lead Free :
Lead Free
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Mounting Type :
Through Hole
Max Power Dissipation :
15W
JESD-609 Code :
e3
Contact Plating :
Tin
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 800mA, 4A
Transistor Type :
PNP
Length :
6.35mm
hFE Min :
40
Package / Case :
TO-225AA, TO-126-3
Max Collector Current :
4A
Introducing Transistors - Bipolar (BJT) - Single onsemi BD788 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, BD788 pinout, BD788 datasheet PDF, BD788 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD788 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD788


PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD788G Overview


In this device, the DC current gain is 40 @ 200mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 800mA, 4A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).50MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

BD788G Features


the DC current gain for this device is 40 @ 200mA 3V
the vce saturation(Max) is 2.5V @ 800mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -4A
a transition frequency of 50MHz


BD788G Applications


There are a lot of ON Semiconductor
BD788G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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