BD788

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Mfr.Part #
BD788
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 60V 4A TO126
Stock
15,550
In Stock :
15,550

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
100μA
Operating Temperature :
-65°C~150°C TJ
Emitter Base Voltage (VEBO) :
6V
Transistor Element Material :
SILICON
Pbfree Code :
yes
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 800mA, 4A
Time@Peak Reflow Temperature-Max (s) :
40
Current Rating :
-4A
Transition Frequency :
50MHz
Max Power Dissipation :
15W
ECCN Code :
EAR99
Lead Free :
Lead Free
Packaging :
Bulk
Element Configuration :
Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 3V
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
260
Weight :
4.535924g
JESD-609 Code :
e3
Pin Count :
3
Width :
6.35mm
Package / Case :
TO-225AA, TO-126-3
Length :
6.35mm
Number of Pins :
3
Number of Elements :
1
Transistor Application :
SWITCHING
Frequency :
50MHz
Factory Lead Time :
2 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
15W
Number of Terminations :
3
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
hFE Min :
40
Radiation Hardening :
No
Gain Bandwidth Product :
50MHz
RoHS Status :
ROHS3 Compliant
REACH SVHC :
No SVHC
Contact Plating :
Tin
Surface Mount :
No
Transistor Type :
PNP
Collector Emitter Voltage (VCEO) :
60V
Collector Emitter Breakdown Voltage :
60V
Polarity/Channel Type :
PNP
Collector Base Voltage (VCBO) :
80V
Max Collector Current :
4A
Published :
2000
Voltage - Rated DC :
-60V
Height :
6.35mm
Datasheets
BD788
Introducing Transistors - Bipolar (BJT) - Single onsemi BD788 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Number of Pins:3, Number of Terminations:3, BD788 pinout, BD788 datasheet PDF, BD788 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD788 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD788


PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD788G Overview


In this device, the DC current gain is 40 @ 200mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 800mA, 4A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).50MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

BD788G Features


the DC current gain for this device is 40 @ 200mA 3V
the vce saturation(Max) is 2.5V @ 800mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -4A
a transition frequency of 50MHz


BD788G Applications


There are a lot of ON Semiconductor
BD788G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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