BD788
- Mfr.Part #
- BD788
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 4A TO126
- Stock
- 15,550
- In Stock :
- 15,550
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 40
- Transistor Element Material :
- SILICON
- Current Rating :
- -4A
- Frequency :
- 50MHz
- Power Dissipation :
- 15W
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Package / Case :
- TO-225AA, TO-126-3
- Weight :
- 4.535924g
- Contact Plating :
- Tin
- Max Collector Current :
- 4A
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 50MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100μA
- Voltage - Rated DC :
- -60V
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Packaging :
- Bulk
- Number of Pins :
- 3
- Published :
- 2000
- Height :
- 6.35mm
- Emitter Base Voltage (VEBO) :
- 6V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 3V
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 50MHz
- Radiation Hardening :
- No
- Pin Count :
- 3
- Max Power Dissipation :
- 15W
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.35mm
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Width :
- 6.35mm
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 800mA, 4A
- Operating Temperature :
- -65°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 80V
- Mounting Type :
- Through Hole
- Datasheets
- BD788
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PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD788G Overview
In this device, the DC current gain is 40 @ 200mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 800mA, 4A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).50MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
BD788G Features
the DC current gain for this device is 40 @ 200mA 3V
the vce saturation(Max) is 2.5V @ 800mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -4A
a transition frequency of 50MHz
BD788G Applications
There are a lot of ON Semiconductor
BD788G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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