BD788

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Mfr.Part #
BD788
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 60V 4A TO126
Stock
15,550
In Stock :
15,550

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Number of Elements :
1
Polarity/Channel Type :
PNP
Collector Emitter Voltage (VCEO) :
60V
Max Power Dissipation :
15W
Factory Lead Time :
2 Weeks
Transistor Element Material :
SILICON
Operating Temperature :
-65°C~150°C TJ
Surface Mount :
No
Weight :
4.535924g
Contact Plating :
Tin
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 200mA 3V
Height :
6.35mm
Emitter Base Voltage (VEBO) :
6V
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency :
50MHz
hFE Min :
40
Package / Case :
TO-225AA, TO-126-3
Transistor Application :
SWITCHING
Transistor Type :
PNP
Mounting Type :
Through Hole
Number of Terminations :
3
Length :
6.35mm
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
Width :
6.35mm
Current - Collector Cutoff (Max) :
100μA
JESD-609 Code :
e3
REACH SVHC :
No SVHC
Collector Base Voltage (VCBO) :
80V
Lead Free :
Lead Free
Packaging :
Bulk
Collector Emitter Breakdown Voltage :
60V
Power Dissipation :
15W
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 800mA, 4A
Transition Frequency :
50MHz
Time@Peak Reflow Temperature-Max (s) :
40
Number of Pins :
3
Radiation Hardening :
No
Current Rating :
-4A
Gain Bandwidth Product :
50MHz
Max Collector Current :
4A
Voltage - Rated DC :
-60V
Published :
2000
Introducing Transistors - Bipolar (BJT) - Single onsemi BD788 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, BD788 pinout, BD788 datasheet PDF, BD788 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD788 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD788


PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD788G Overview


In this device, the DC current gain is 40 @ 200mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 800mA, 4A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).50MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

BD788G Features


the DC current gain for this device is 40 @ 200mA 3V
the vce saturation(Max) is 2.5V @ 800mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -4A
a transition frequency of 50MHz


BD788G Applications


There are a lot of ON Semiconductor
BD788G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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