BD788
- Mfr.Part #
- BD788
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 4A TO126
- Stock
- 15,550
- In Stock :
- 15,550
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Frequency :
- 50MHz
- Transistor Element Material :
- SILICON
- hFE Min :
- 40
- Weight :
- 4.535924g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -4A
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 3V
- Radiation Hardening :
- No
- Pin Count :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- REACH SVHC :
- No SVHC
- Height :
- 6.35mm
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Max Collector Current :
- 4A
- Package / Case :
- TO-225AA, TO-126-3
- Max Power Dissipation :
- 15W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 800mA, 4A
- Power Dissipation :
- 15W
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100μA
- Length :
- 6.35mm
- Gain Bandwidth Product :
- 50MHz
- Contact Plating :
- Tin
- Width :
- 6.35mm
- Published :
- 2000
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -60V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Terminations :
- 3
- Transition Frequency :
- 50MHz
- Datasheets
- BD788
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PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD788G Overview
In this device, the DC current gain is 40 @ 200mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 800mA, 4A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).50MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
BD788G Features
the DC current gain for this device is 40 @ 200mA 3V
the vce saturation(Max) is 2.5V @ 800mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -4A
a transition frequency of 50MHz
BD788G Applications
There are a lot of ON Semiconductor
BD788G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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