BD788
- Mfr.Part #
- BD788
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 4A TO126
- Stock
- 15,550
- In Stock :
- 15,550
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 15W
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- No
- Weight :
- 4.535924g
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 3V
- Height :
- 6.35mm
- Emitter Base Voltage (VEBO) :
- 6V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 50MHz
- hFE Min :
- 40
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Length :
- 6.35mm
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 6.35mm
- Current - Collector Cutoff (Max) :
- 100μA
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 80V
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 60V
- Power Dissipation :
- 15W
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 800mA, 4A
- Transition Frequency :
- 50MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Current Rating :
- -4A
- Gain Bandwidth Product :
- 50MHz
- Max Collector Current :
- 4A
- Voltage - Rated DC :
- -60V
- Published :
- 2000
- Datasheets
- BD788
BD788 Documents
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PNP -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD788G Overview
In this device, the DC current gain is 40 @ 200mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 800mA, 4A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).50MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
BD788G Features
the DC current gain for this device is 40 @ 200mA 3V
the vce saturation(Max) is 2.5V @ 800mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -4A
a transition frequency of 50MHz
BD788G Applications
There are a lot of ON Semiconductor
BD788G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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