BD437G
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- Mfr.Part #
- BD437G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 4A TO126
- Stock
- 50,385
- In Stock ：
- 50,385
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Collector Emitter Breakdown Voltage :
- 45V
- Max Collector Current :
- 4A
- Current Rating :
- 4A
- Max Power Dissipation :
- 36W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 36W
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Gain Bandwidth Product :
- 3MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 800mV
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Transition Frequency :
- 3MHz
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2003
- Surface Mount :
- No
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BD437
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- hFE Min :
- 30
- Pin Count :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Application :
- SWITCHING
- Frequency :
- 3MHz
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 45V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Voltage - Rated DC :
- 45V
- Number of Elements :
- 1
- Datasheets
- BD437G
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NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD437G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD437G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD437G Applications
There are a lot of ON Semiconductor
BD437G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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