BD243CG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Frequency :

3MHz

Mounting Type :

Through Hole

Power Dissipation :

65W

Factory Lead Time :

6 Weeks

Collector Emitter Voltage (VCEO) :

100V

Emitter Base Voltage (VEBO) :

5V

Width :

4.82mm

Current - Collector Cutoff (Max) :

700µA

Transition Frequency :

3MHz

Pbfree Code :

yes

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Voltage - Rated DC :

100V

Collector Emitter Breakdown Voltage :

100V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1A, 6A

Transistor Application :

SWITCHING

Current Rating :

6A

Height :

15.75mm

Pin Count :

3

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3A 4V

Operating Temperature :

-65°C~150°C TJ

Gain Bandwidth Product :

3MHz

ECCN Code :

EAR99

Number of Pins :

3

Contact Plating :

Tin

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

JESD-609 Code :

e3

Max Power Dissipation :

65W

Collector Emitter Saturation Voltage :

1.5V

Published :

2004

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Base Part Number :

BD243

Number of Terminations :

3

Radiation Hardening :

No

Max Collector Current :

6A

REACH SVHC :

No SVHC

Case Connection :

COLLECTOR

Collector Base Voltage (VCBO) :

100V

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Length :

10.28mm

Package / Case :

TO-220-3

hFE Min :

30

JEDEC-95 Code :

TO-220AB