BD242CG
- Mfr.Part #
- BD242CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A TO220
- Stock
- 6,630
- In Stock :
- 6,630
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 6 Weeks
- Max Collector Current :
- 3A
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 3MHz
- Collector Emitter Saturation Voltage :
- 1.2V
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 115V
- Number of Terminations :
- 3
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 5V
- Power - Max :
- 40W
- Collector Emitter Breakdown Voltage :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Current - Collector Cutoff (Max) :
- 300μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 4V
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Power Dissipation :
- 40mW
- hFE Min :
- 25
- Voltage - Rated DC :
- -100V
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 3MHz
- Base Part Number :
- BD242
- Surface Mount :
- No
- Pin Count :
- 3
- Frequency :
- 3MHz
- Max Power Dissipation :
- 40W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 600mA, 3A
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Current Rating :
- -3A
- Contact Plating :
- Tin
- Published :
- 2004
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- BD242CG

PNP -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD242CG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
BD242CG Features
the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD242CG Applications
There are a lot of ON Semiconductor
BD242CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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