BD239CTU

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Mfr.Part #
BD239CTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 2A TO220-3
Stock
5,456
In Stock :
5,456

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
300μA
Length :
9.9mm
Mount :
Through Hole
Transistor Type :
NPN
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-220-3
Collector Emitter Saturation Voltage :
700mV
Height :
15.7mm
Lead Free :
Lead Free
Power Dissipation :
30W
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
100V
Base Part Number :
BD239
Number of Terminations :
3
Max Power Dissipation :
30W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Weight :
1.8g
Number of Elements :
1
Polarity/Channel Type :
NPN
Emitter Base Voltage (VEBO) :
5V
Factory Lead Time :
2 Weeks
Width :
4.5mm
Voltage - Rated DC :
100V
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 1A 4V
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
700mV @ 200mA, 1A
Operating Temperature :
150°C TJ
Current Rating :
2A
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Element Configuration :
Single
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
100V
Contact Plating :
Tin
Max Collector Current :
2A
Qualification Status :
Not Qualified
Collector Emitter Breakdown Voltage :
100V
Published :
2000
Packaging :
Tube
hFE Min :
15
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Datasheets
BD239CTU
Introducing Transistors - Bipolar (BJT) - Single onsemi BD239CTU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, Base Part Number:BD239, Number of Terminations:3, Operating Temperature:150°C TJ, BD239CTU pinout, BD239CTU datasheet PDF, BD239CTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD239CTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD239CTU


NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD239CTU Overview


In this device, the DC current gain is 15 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 200mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

BD239CTU Features


the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A


BD239CTU Applications


There are a lot of ON Semiconductor
BD239CTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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