BD239C

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Mfr.Part #
BD239C
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 2A TO220-3
Stock
7,205
In Stock :
7,205

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Width :
4.6mm
Element Configuration :
Single
Power Dissipation :
2W
Collector Emitter Breakdown Voltage :
100V
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Number of Pins :
3
Base Part Number :
BD239
Package / Case :
TO-220-3
Pin Count :
3
Contact Plating :
Tin
Transistor Type :
NPN
Collector Emitter Saturation Voltage :
700mV
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
NPN
hFE Min :
40
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
100V
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 1A 4V
Vce Saturation (Max) @ Ib, Ic :
700mV @ 200mA, 1A
REACH SVHC :
No SVHC
Radiation Hardening :
No
Length :
10.4mm
Height :
9.15mm
JESD-609 Code :
e3
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-220AB
Packaging :
Tube
VCEsat-Max :
0.7 V
Current - Collector Cutoff (Max) :
300μA
Weight :
4.535924g
Emitter Base Voltage (VEBO) :
5V
Transistor Element Material :
SILICON
Number of Terminations :
3
Collector Base Voltage (VCBO) :
115V
Number of Elements :
1
Factory Lead Time :
8 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
2W
Mounting Type :
Through Hole
Operating Temperature :
150°C TJ
ECCN Code :
EAR99
Max Collector Current :
2A
Datasheets
BD239C
Introducing Transistors - Bipolar (BJT) - Single onsemi BD239C from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:BD239, Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, BD239C pinout, BD239C datasheet PDF, BD239C amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD239C ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD239C


NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD239C Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.

BD239C Features


the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V


BD239C Applications


There are a lot of STMicroelectronics
BD239C applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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