BD239C
- Mfr.Part #
- BD239C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A TO220-3
- Stock
- 7,205
- In Stock :
- 7,205
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 4.6mm
- Element Configuration :
- Single
- Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Pins :
- 3
- Base Part Number :
- BD239
- Package / Case :
- TO-220-3
- Pin Count :
- 3
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 700mV
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- hFE Min :
- 40
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Length :
- 10.4mm
- Height :
- 9.15mm
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- VCEsat-Max :
- 0.7 V
- Current - Collector Cutoff (Max) :
- 300μA
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 115V
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2W
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Max Collector Current :
- 2A
- Datasheets
- BD239C

NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD239C Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
BD239C Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
BD239C Applications
There are a lot of STMicroelectronics
BD239C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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