BD239C

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Mfr.Part #
BD239C
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 2A TO220
Stock
7,205
In Stock :
7,205

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
JEDEC-95 Code :
TO-220AB
Length :
10.4mm
Width :
4.6mm
Transistor Type :
NPN
Collector Emitter Saturation Voltage :
700mV
Package / Case :
TO-220-3
Power Dissipation :
2W
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
700mV @ 200mA, 1A
Pin Count :
3
Collector Emitter Voltage (VCEO) :
100V
Collector Emitter Breakdown Voltage :
100V
Collector Base Voltage (VCBO) :
115V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
4.535924g
Mount :
Through Hole
hFE Min :
40
Operating Temperature :
150°C TJ
Max Power Dissipation :
2W
Packaging :
Tube
VCEsat-Max :
0.7 V
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Number of Elements :
1
Max Collector Current :
2A
Emitter Base Voltage (VEBO) :
5V
Contact Plating :
Tin
ECCN Code :
EAR99
Number of Terminations :
3
Transistor Element Material :
SILICON
Base Part Number :
BD239
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
300μA
Number of Pins :
3
REACH SVHC :
No SVHC
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 1A 4V
Height :
9.15mm
Factory Lead Time :
8 Weeks
JESD-609 Code :
e3
Datasheets
BD239C
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD239C from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Terminations:3, Base Part Number:BD239, Number of Pins:3, BD239C pinout, BD239C datasheet PDF, BD239C amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD239C ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD239C


NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD239C Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.

BD239C Features


the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V


BD239C Applications


There are a lot of STMicroelectronics
BD239C applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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