BD239C
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- Mfr.Part #
- BD239C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A TO220
- Stock
- 7,205
- In Stock ：
- 7,205
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Base Part Number :
- BD239
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Power Dissipation :
- 2W
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 115V
- Collector Emitter Saturation Voltage :
- 700mV
- Length :
- 10.4mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Max Collector Current :
- 2A
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tube
- Height :
- 9.15mm
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 300μA
- Max Power Dissipation :
- 2W
- Width :
- 4.6mm
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- JEDEC-95 Code :
- TO-220AB
- VCEsat-Max :
- 0.7 V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Weight :
- 4.535924g
- Collector Emitter Breakdown Voltage :
- 100V
- hFE Min :
- 40
- Polarity/Channel Type :
- NPN
- Datasheets
- BD239C
NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD239C Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
BD239C Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
BD239C Applications
There are a lot of STMicroelectronics
BD239C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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