BD239BTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

30W

Transistor Element Material :

SILICON

Base Part Number :

BD239

Lead Free :

Lead Free

Current Rating :

2A

Polarity/Channel Type :

NPN

Height :

15.7mm

Element Configuration :

Single

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

ECCN Code :

EAR99

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Voltage (VCEO) :

90V

Weight :

1.8g

RoHS Status :

RoHS Compliant

Power Dissipation :

30W

Collector Emitter Saturation Voltage :

700mV

Factory Lead Time :

2 Weeks

Collector Emitter Breakdown Voltage :

80V

Published :

2000

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

Packaging :

Tube

Package / Case :

TO-220-3

Length :

9.9mm

Pbfree Code :

yes

Contact Plating :

Tin

Transistor Type :

NPN

Voltage - Rated DC :

80V

Number of Terminations :

3

Current - Collector Cutoff (Max) :

300μA

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 1A 4V

Number of Elements :

1

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

700mV @ 200mA, 1A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Collector Current :

2A

Collector Base Voltage (VCBO) :

80V

hFE Min :

15

Width :

4.5mm