BD238S
- Mfr.Part #
- BD238S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 2A TO126-3
- Stock
- 8,360
- In Stock :
- 8,360
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Transition Frequency :
- 3MHz
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Element Configuration :
- Single
- Current Rating :
- -2A
- hFE Min :
- 25
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 2A
- Base Part Number :
- BD238
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Type :
- PNP
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency :
- 3MHz
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- -100V
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 3MHz
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 25W
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Voltage - Rated DC :
- -80V
- Qualification Status :
- Not Qualified
- Weight :
- 761mg
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Max Power Dissipation :
- 25W
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Datasheets
- BD238S

PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD238S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
BD238S Features
the DC current gain for this device is 25 @ 1A 2V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 3MHz
BD238S Applications
There are a lot of ON Semiconductor
BD238S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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