BD238G
- Mfr.Part #
- BD238G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 2A TO126
- Stock
- 5,145
- In Stock :
- 5,145
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 40
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Transistor Type :
- PNP
- Max Collector Current :
- 2A
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Frequency :
- 3MHz
- Package / Case :
- TO-225AA, TO-126-3
- JESD-609 Code :
- e3
- Power Dissipation :
- 25W
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 25W
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Collector Emitter Saturation Voltage :
- 600mV
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Transition Frequency :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 3MHz
- Published :
- 2003
- Qualification Status :
- Not Qualified
- Datasheets
- BD238G
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PNP -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD238G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 2A volts.
BD238G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD238G Applications
There are a lot of ON Semiconductor
BD238G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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