BD237
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- Mfr.Part #
- BD237
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 2A SOT32-3
- Stock
- 3,482
- In Stock ：
- 3,482
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 100V
- VCEsat-Max :
- 0.6 V
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Case Connection :
- Isolated
- Max Power Dissipation :
- 25W
- hFE Min :
- 40
- Number of Terminations :
- 3
- Current Rating :
- 2A
- Gain Bandwidth Product :
- 3MHz
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Width :
- 2.7mm
- Max Collector Current :
- 2A
- Frequency :
- 3MHz
- Collector Emitter Saturation Voltage :
- 600mV
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Length :
- 7.8mm
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 25W
- ECCN Code :
- EAR99
- Transition Frequency :
- 3MHz
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Collector Base Voltage (VCBO) :
- 80V
- Pin Count :
- 3
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 80V
- Height :
- 10.8mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Base Part Number :
- BD237
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-225AA, TO-126-3
- Datasheets
- BD237
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD237 Overview
In this device, the DC current gain is 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
BD237 Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz
BD237 Applications
There are a lot of STMicroelectronics
BD237 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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