BD237
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- Mfr.Part #
- BD237
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 2A SOT32-3
- Stock
- 3,482
- In Stock ：
- 3,482
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Base Part Number :
- BD237
- Height :
- 10.8mm
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Width :
- 2.7mm
- Transistor Application :
- SWITCHING
- VCEsat-Max :
- 0.6 V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Tube
- Length :
- 7.8mm
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 600mV
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 100V
- Frequency :
- 3MHz
- Max Power Dissipation :
- 25W
- Factory Lead Time :
- 8 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 3MHz
- Number of Pins :
- 3
- Power Dissipation :
- 25W
- Collector Base Voltage (VCBO) :
- 80V
- hFE Min :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Max Collector Current :
- 2A
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 3MHz
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 80V
- Current Rating :
- 2A
- Case Connection :
- Isolated
- Package / Case :
- TO-225AA, TO-126-3
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Datasheets
- BD237
BD237 Documents
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD237 Overview
In this device, the DC current gain is 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
BD237 Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz
BD237 Applications
There are a lot of STMicroelectronics
BD237 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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