BD237
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- Mfr.Part #
- BD237
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 2A SOT32-3
- Stock
- 3,482
- In Stock ：
- 3,482
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 3MHz
- Element Configuration :
- Single
- VCEsat-Max :
- 0.6 V
- Transition Frequency :
- 3MHz
- Current Rating :
- 2A
- Number of Elements :
- 1
- Max Power Dissipation :
- 25W
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Collector Emitter Breakdown Voltage :
- 80V
- Length :
- 7.8mm
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Case Connection :
- Isolated
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 80V
- hFE Min :
- 40
- Max Collector Current :
- 2A
- Transistor Element Material :
- SILICON
- Height :
- 10.8mm
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Frequency :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Number of Pins :
- 3
- Voltage - Rated DC :
- 100V
- Collector Emitter Saturation Voltage :
- 600mV
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Pin Count :
- 3
- Power Dissipation :
- 25W
- Base Part Number :
- BD237
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Width :
- 2.7mm
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Datasheets
- BD237
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD237 Overview
In this device, the DC current gain is 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
BD237 Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz
BD237 Applications
There are a lot of STMicroelectronics
BD237 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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