BD179G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

800mV

Weight :

4.535924g

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

NPN

Packaging :

Bulk

ECCN Code :

EAR99

Operating Temperature :

-65°C~150°C TJ

Base Part Number :

BD179

JESD-609 Code :

e3

Lead Free :

Lead Free

Surface Mount :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Max Power Dissipation :

30W

hFE Min :

63

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Elements :

1

Mounting Type :

Through Hole

Package / Case :

TO-225AA, TO-126-3

Contact Plating :

Tin

Published :

2006

Collector Emitter Breakdown Voltage :

80V

Gain Bandwidth Product :

3MHz

Width :

6.35mm

Height :

6.35mm

Voltage - Rated DC :

80V

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Number of Terminations :

3

Power Dissipation :

30W

Max Collector Current :

3A

Number of Pins :

3

Factory Lead Time :

2 Weeks

Polarity/Channel Type :

NPN

Pbfree Code :

yes

Radiation Hardening :

No

Frequency :

3MHz

Vce Saturation (Max) @ Ib, Ic :

800mV @ 100mA, 1A

Length :

31.75mm

Current - Collector Cutoff (Max) :

100μA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

80V

Pin Count :

3

Collector Emitter Voltage (VCEO) :

80V

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Current Rating :

3A

Element Configuration :

Single

Transition Frequency :

3MHz