BD17910STU
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- Mfr.Part #
- BD17910STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO126-3
- Stock
- 1,646
- In Stock ：
- 1,646
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Package / Case :
- TO-225AA, TO-126-3
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 80V
- Factory Lead Time :
- 6 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- 800mV
- Power Dissipation :
- 30W
- Weight :
- 761mg
- Base Part Number :
- BD179
- JESD-30 Code :
- R-PSFM-T3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Max Power Dissipation :
- 30W
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 3MHz
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Transition Frequency :
- 3MHz
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 80V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Base Voltage (VCBO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Published :
- 2017
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 3A
- hFE Min :
- 40
- Operating Temperature :
- 150°C TJ
- Current Rating :
- 3A
- Voltage - Rated DC :
- 80V
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Frequency :
- 3MHz
- Packaging :
- Tube
- Datasheets
- BD17910STU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD17910STU Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
BD17910STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17910STU Applications
There are a lot of ON Semiconductor
BD17910STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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