BD17910STU
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- Mfr.Part #
- BD17910STU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A TO126-3
- Stock
- 1,646
- In Stock ：
- 1,646
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Collector Base Voltage (VCBO) :
- 80V
- Max Collector Current :
- 3A
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Element Material :
- SILICON
- Current Rating :
- 3A
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Published :
- 2017
- Weight :
- 761mg
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Base Part Number :
- BD179
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 3MHz
- Max Power Dissipation :
- 30W
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 80V
- JESD-30 Code :
- R-PSFM-T3
- Frequency :
- 3MHz
- Transition Frequency :
- 3MHz
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- hFE Min :
- 40
- Package / Case :
- TO-225AA, TO-126-3
- Factory Lead Time :
- 6 Weeks
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Collector Emitter Saturation Voltage :
- 800mV
- Mount :
- Through Hole
- Power Dissipation :
- 30W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- BD17910STU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD17910STU Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
BD17910STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17910STU Applications
There are a lot of ON Semiconductor
BD17910STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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