BCX71HE6327
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- Mfr.Part #
- BCX71HE6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23
- Stock
- 207,096
- In Stock ：
- 207,096
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Frequency :
- 250MHz
- Max Power Dissipation :
- 330mW
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- -45V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Base Part Number :
- BCX71
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Halogen Free :
- Not Halogen Free
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 250MHz
- Number of Elements :
- 1
- Current Rating :
- -100mA
- Collector Base Voltage (VCBO) :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 330mW
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 550mV
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Published :
- 2006
- Datasheets
- BCX71HE6327
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX71HE6327HTSA1 Overview
This device has a DC current gain of 180 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 550mV @ 1.25mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BCX71HE6327HTSA1 Features
the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BCX71HE6327HTSA1 Applications
There are a lot of Infineon Technologies
BCX71HE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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