BCX5610TA
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- Mfr.Part #
- BCX5610TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT89-3
- Stock
- 3,696
- In Stock ：
- 3,696
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 500mV
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- Collector-Base Capacitance-Max :
- 25pF
- Published :
- 2012
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 150MHz
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Voltage (VCEO) :
- 80V
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-F3
- Transistor Element Material :
- SILICON
- Width :
- 2.6mm
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Max Power Dissipation :
- 1W
- Height :
- 1.5mm
- Max Collector Current :
- 1A
- Transition Frequency :
- 150MHz
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Number of Pins :
- 4
- Base Part Number :
- BCX5610
- Package / Case :
- TO-243AA
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 80V
- Additional Feature :
- High Reliability
- Terminal Form :
- Flat
- Weight :
- 51.993025mg
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Frequency :
- 150MHz
- Pbfree Code :
- yes
- Power Dissipation :
- 1W
- hFE Min :
- 63
- Radiation Hardening :
- No
- Pin Count :
- 3
- Number of Terminations :
- 3
- Length :
- 4.6mm
- Datasheets
- BCX5610TA
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX5610TA Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BCX5610TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5610TA Applications
There are a lot of Diodes Incorporated
BCX5610TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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