BCX51-16,115
- Mfr.Part #
- BCX51-16,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A SOT89
- Stock
- 355,919
- In Stock :
- 355,919
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 2.6mm
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- 500mV
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Max Collector Current :
- 1A
- Number of Terminations :
- 3
- Max Power Dissipation :
- 1.3W
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Flat
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 45V
- hFE Min :
- 100
- Transition Frequency :
- 50MHz
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Frequency :
- 145MHz
- REACH SVHC :
- No SVHC
- Published :
- 2001
- Forward Voltage :
- 1.2V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Package / Case :
- TO-243AA
- Power - Max :
- 1.3W
- Gain Bandwidth Product :
- 145MHz
- Base Part Number :
- BCX51
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Height :
- 1.6mm
- Max Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Power Dissipation :
- 1.35W
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Length :
- 4.6mm
- Datasheets
- BCX51-16,115
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BCX51-16,115 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.50MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCX51-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
BCX51-16,115 Applications
There are a lot of Nexperia USA Inc.
BCX51-16,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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