BCX5110TA
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- Mfr.Part #
- BCX5110TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A SOT89-3
- Stock
- 13,882
- In Stock ：
- 13,882
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Terminal Form :
- Flat
- Contact Plating :
- Tin
- Length :
- 4.5mm
- Number of Pins :
- 4
- Collector Base Voltage (VCBO) :
- 45V
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Saturation Voltage :
- -500mV
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Pbfree Code :
- yes
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Collector Emitter Voltage (VCEO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Base Part Number :
- BCX51
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Transition Frequency :
- 150MHz
- JESD-30 Code :
- R-PSSO-F3
- Height :
- 1.5mm
- JESD-609 Code :
- e3
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-243AA
- Published :
- 2011
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Additional Feature :
- High Reliability
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 51.993025mg
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -65°C~150°C TJ
- Frequency :
- 150MHz
- Width :
- 2.5mm
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 45V
- Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 1W
- Datasheets
- BCX5110TA
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BCX5110TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BCX5110TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5110TA Applications
There are a lot of Diodes Incorporated
BCX5110TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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