BCX55TA
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- Mfr.Part #
- BCX55TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT89-3
- Stock
- 253
- In Stock ：
- 253
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 150MHz
- Number of Terminations :
- 3
- Max Power Dissipation :
- 1W
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Saturation Voltage :
- 500mV
- Weight :
- 51.993025mg
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-F3
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Length :
- 4.6mm
- Additional Feature :
- High Reliability
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 150MHz
- Operating Temperature :
- -65°C~150°C TJ
- Frequency :
- 150MHz
- Published :
- 2012
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- Max Collector Current :
- 1A
- Power Dissipation :
- 1W
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Number of Pins :
- 4
- Package / Case :
- TO-243AA
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Collector-Base Capacitance-Max :
- 25pF
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Height :
- 1.6mm
- Collector Base Voltage (VCBO) :
- 60V
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BCX55
- Collector Emitter Breakdown Voltage :
- 60V
- Width :
- 2.6mm
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 15 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- BCX55TA
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX55TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BCX55TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX55TA Applications
There are a lot of Diodes Incorporated
BCX55TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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