BCX5516E6433HTMA1
- Mfr.Part #
- BCX5516E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT89
- Stock
- 4,795
- In Stock :
- 4,795
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 2W
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Published :
- 2008
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- TO-243AA
- Number of Pins :
- 4
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 2W
- Base Part Number :
- BCX55
- Radiation Hardening :
- No
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-F3
- RoHS Status :
- RoHS Compliant
- Current - Collector (Ic) (Max) :
- 1A
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Single
- Max Collector Current :
- 1A
- Operating Temperature :
- 150°C TJ
- Datasheets
- BCX5516E6433HTMA1

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX5516E6433HTMA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 1A volts.
BCX5516E6433HTMA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCX5516E6433HTMA1 Applications
There are a lot of Infineon Technologies
BCX5516E6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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