BCX5510TA
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- Mfr.Part #
- BCX5510TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT89-3
- Stock
- 8,222
- In Stock ：
- 8,222
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-243AA
- Operating Temperature :
- -65°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Power Dissipation :
- 1W
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2011
- Transistor Type :
- NPN
- Factory Lead Time :
- 15 Weeks
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Additional Feature :
- High Reliability
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Collector-Base Capacitance-Max :
- 25pF
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Pins :
- 4
- Transition Frequency :
- 150MHz
- Weight :
- 51.993025mg
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 150MHz
- Pbfree Code :
- yes
- Length :
- 4.6mm
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Frequency :
- 150MHz
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Terminal Form :
- Flat
- Transistor Application :
- SWITCHING
- Width :
- 2.6mm
- Height :
- 1.6mm
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 500mV
- Base Part Number :
- BCX5510
- JESD-30 Code :
- R-PSSO-F3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 1W
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Datasheets
- BCX5510TA
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX5510TA Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCX5510TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5510TA Applications
There are a lot of Diodes Incorporated
BCX5510TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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