BCX54,115
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- Mfr.Part #
- BCX54,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A SOT89
- Stock
- 204,875
- In Stock ：
- 204,875
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Max Collector Current :
- 1A
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Length :
- 4.6mm
- Transistor Type :
- NPN
- Power - Max :
- 1.25W
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Base Part Number :
- BCX54
- Power Dissipation :
- 1.35W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 2.6mm
- Gain Bandwidth Product :
- 180MHz
- Collector Base Voltage (VCBO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Flat
- Height :
- 1.6mm
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Package / Case :
- TO-243AA
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Published :
- 2007
- Transition Frequency :
- 180MHz
- Max Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 1.25W
- Factory Lead Time :
- 4 Weeks
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Radiation Hardening :
- No
- Frequency :
- 180MHz
- Datasheets
- BCX54,115
SOT89.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX54,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 180MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BCX54,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCX54,115 Applications
There are a lot of Nexperia USA Inc.
BCX54,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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