BCX54,115
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- Mfr.Part #
- BCX54,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- NEXPERIA BCX54 - SMALL SIGNAL BI
- Stock
- 19,835
- In Stock ：
- 19,835
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Width :
- 2.6mm
- Case Connection :
- COLLECTOR
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Base Part Number :
- BCX54
- Package / Case :
- TO-243AA
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 180MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Frequency :
- 180MHz
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 180MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Flat
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 45V
- Length :
- 4.6mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1.25W
- Power Dissipation :
- 1.35W
- Height :
- 1.6mm
- Power - Max :
- 1.25W
- Max Breakdown Voltage :
- 45V
- Operating Temperature :
- 150°C TJ
- Datasheets
- BCX54,115
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX54,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 180MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BCX54,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCX54,115 Applications
There are a lot of Nexperia USA Inc.
BCX54,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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