BCX5310E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

125 MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Transistor Polarity :

PNP

Voltage - Collector Emitter Breakdown (Max) :

80 V

Number of Pins :

4

Current - Collector Cutoff (Max) :

100nA (ICBO)

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Power - Max :

2 W

JESD-30 Code :

R-PSSO-F3

Collector Base Voltage (VCBO) :

100 V

Number of Elements :

1

Lead Free :

Contains Lead

Product Status :

Active

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Surface Mount :

yes

Series :

Automotive, AEC-Q101

Frequency - Transition :

125MHz

Packaging :

Cut Tape

Collector Emitter Breakdown Voltage :

80 V

Case Connection :

COLLECTOR

Gain Bandwidth Product :

125 MHz

Transistor Application :

SWITCHING

Package / Case :

TO-243AA

Polarity :

PNP

Package Shape :

RECTANGULAR

Max Breakdown Voltage :

80 V

Number of Terminals :

3

Terminal Form :

Flat

Element Configuration :

Single

Reach Compliance Code :

Unknown

Min Operating Temperature :

-65 °C

Qualification Status :

COMMERCIAL

RoHS :

Compliant

hFE Min :

25

Collector Emitter Voltage (VCEO) :

80 V

Max Collector Current :

1 A

Supplier Device Package :

PG-SOT89-4-2

Current Rating :

-1 A

DC Current Gain-Min (hFE) :

63

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 50mA, 2V

Collector-Emitter Voltage-Max :

80 V

JESD-609 Code :

e3

Max Power Dissipation :

2 W

Pbfree Code :

yes

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

5 V

Collector Current-Max (IC) :

1 A

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

1

Voltage Rating (DC) :

-80 V

Radiation Hardening :

No

Current - Collector (Ic) (Max) :

1 A

Package :

Bulk

Max Operating Temperature :

150 °C

Configuration :

Single

Transistor Element Material :

SILICON

Manufacturer :

Rochester Electronics LLC