BCX19T116
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- Mfr.Part #
- BCX19T116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SST3
- Stock
- 3,324
- In Stock ：
- 3,324
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 50V
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 200mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Max Power Dissipation :
- 425mW
- Termination :
- SMD/SMT
- Number of Terminations :
- 3
- hFE Min :
- 40
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 45V
- Collector Emitter Voltage (VCEO) :
- 620mV
- Base Part Number :
- BCX19
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 500mA
- Max Collector Current :
- 500mA
- Radiation Hardening :
- No
- Factory Lead Time :
- 13 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Breakdown Voltage :
- 45V
- Power - Max :
- 350mW
- Terminal Finish :
- TIN SILVER COPPER
- VCEsat-Max :
- 0.7 V
- Transistor Type :
- NPN
- HTS Code :
- 8541.21.00.95
- Collector Emitter Saturation Voltage :
- 620mV
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 620mV @ 50mA, 500mA
- Continuous Collector Current :
- 500mA
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Copper, Silver, Tin
- Gain Bandwidth Product :
- 250MHz
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 45V
- JESD-609 Code :
- e1
- Terminal Position :
- Dual
- Datasheets
- BCX19T116
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCX19T116 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 620mV, which allows for maximum design flexibility.When VCE saturation is 620mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BCX19T116 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz
BCX19T116 Applications
There are a lot of ROHM Semiconductor
BCX19T116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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