BCW68HTA
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- Mfr.Part #
- BCW68HTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 1,268
- In Stock ：
- 1,268
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Height :
- 1.1mm
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Current Rating :
- -800mA
- Power Dissipation :
- 330mW
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 100MHz
- Weight :
- 7.994566mg
- Terminal Form :
- Gull wing
- Published :
- 2006
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Width :
- 1.4mm
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 3mm
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- -800mA
- Number of Pins :
- 3
- Base Part Number :
- BCW68
- Collector Emitter Breakdown Voltage :
- 45V
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Current - Collector Cutoff (Max) :
- 20nA
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Max Collector Current :
- 800mA
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 45V
- Voltage - Rated DC :
- -45V
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -700mV
- Max Power Dissipation :
- 330mW
- Packaging :
- Tape and Reel (TR)
- Turn Off Time-Max (toff) :
- 400ns
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- BCW68HTA
PNP -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW68HTA Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.A -800mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -800mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BCW68HTA Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BCW68HTA Applications
There are a lot of Diodes Incorporated
BCW68HTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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