BCW68GLT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Frequency :

100MHz

Max Power Dissipation :

300mW

Transistor Element Material :

SILICON

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Published :

1996

Power Dissipation :

300mW

Gain Bandwidth Product :

100MHz

Element Configuration :

Single

Transition Frequency :

100MHz

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Base Part Number :

BCW68

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Height :

1.11mm

Length :

3.04mm

Collector Emitter Saturation Voltage :

-1.5V

Polarity/Channel Type :

PNP

Current - Collector Cutoff (Max) :

20nA

ECCN Code :

EAR99

hFE Min :

120

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

45V

Power - Max :

225mW

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 30mA, 300mA

Factory Lead Time :

4 Weeks

Lead Free :

Lead Free

Number of Terminations :

3

Max Collector Current :

800mA

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

60V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 10mA 1V

Width :

2.64mm