BCW68GLT1
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- Mfr.Part #
- BCW68GLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP GP 45V 800MA SOT-23
- Stock
- 9,997
- In Stock ：
- 9,997
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 225mW
- Max Breakdown Voltage :
- 45V
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 45V
- Current Rating :
- -800mA
- Base Part Number :
- BCW68
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Voltage - Rated DC :
- -45V
- Number of Elements :
- 1
- Factory Lead Time :
- 4 Weeks
- Length :
- 3.04mm
- Max Collector Current :
- 800mA
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Max Power Dissipation :
- 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 10mA 1V
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 120
- Current - Collector Cutoff (Max) :
- 20nA
- Height :
- 1.01mm
- Pbfree Code :
- yes
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 30mA, 300mA
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 1996
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- -45V
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 300mW
- Width :
- 1.4mm
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- -1.5V
- Datasheets
- BCW68GLT1
PNP -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW68GLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of -1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 800mA volts.
BCW68GLT1G Features
the DC current gain for this device is 120 @ 10mA 1V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 100MHz
BCW68GLT1G Applications
There are a lot of ON Semiconductor
BCW68GLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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