BCW66GLT3G
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- Mfr.Part #
- BCW66GLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 192,405
- In Stock ：
- 192,405
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Collector Base Voltage (VCBO) :
- 75V
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 2.64mm
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 225mW
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Height :
- 1.11mm
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 700mV
- Collector Emitter Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- hFE Min :
- 50
- Turn Off Time-Max (toff) :
- 400ns
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 300mW
- Length :
- 3.04mm
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 20nA
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 800mA
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 45V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2007
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Base Part Number :
- BCW66
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BCW66GLT3G
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66GLT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 800mA volts.
BCW66GLT3G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW66GLT3G Applications
There are a lot of ON Semiconductor
BCW66GLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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