BCW66GLT1G
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- Mfr.Part #
- BCW66GLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 6,483
- In Stock ：
- 6,483
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Turn Off Time-Max (toff) :
- 400ns
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Collector Base Voltage (VCBO) :
- 75V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 45V
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 45V
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.3mm
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 700mV
- hFE Min :
- 110
- Lead Free :
- Lead Free
- Surface Mount :
- yes
- Number of Elements :
- 1
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- BCW66
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 300mW
- Max Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 1996
- Length :
- 2.9mm
- Height :
- 940μm
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 20nA
- Max Collector Current :
- 800mA
- Current Rating :
- 800mA
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- BCW66GLT1G
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66GLT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BCW66GLT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW66GLT1G Applications
There are a lot of ON Semiconductor
BCW66GLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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