BCW66GLT1
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- Mfr.Part #
- BCW66GLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 44,096
- In Stock ：
- 44,096
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Collector Current :
- 800mA
- Base Part Number :
- BCW66
- Transistor Element Material :
- SILICON
- Length :
- 2.9mm
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 400ns
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 110
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.3mm
- Current Rating :
- 800mA
- Pin Count :
- 3
- Surface Mount :
- yes
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 700mV
- Voltage - Rated DC :
- 45V
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 300mW
- Collector Base Voltage (VCBO) :
- 75V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Collector Emitter Breakdown Voltage :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 20nA
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 940μm
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Published :
- 1996
- Datasheets
- BCW66GLT1
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66GLT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BCW66GLT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW66GLT1G Applications
There are a lot of ON Semiconductor
BCW66GLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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