BCW66G
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- Mfr.Part #
- BCW66G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A SOT23-3
- Stock
- 27,511
- In Stock ：
- 27,511
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 930μm
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 45V
- Mount :
- Surface Mount
- Base Part Number :
- BCW66
- Element Configuration :
- Single
- Max Frequency :
- 100MHz
- Contact Plating :
- Tin
- Max Collector Current :
- 1A
- Published :
- 2002
- Max Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Supplier Device Package :
- SOT-23-3
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Transistor Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage :
- 45V
- hFE Min :
- 160
- Power - Max :
- 350mW
- Current - Collector (Ic) (Max) :
- 1A
- Polarity :
- NPN
- Gain Bandwidth Product :
- 170MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- 75V
- Max Power Dissipation :
- 350mW
- Frequency - Transition :
- 100MHz
- Current Rating :
- 1A
- Current - Collector Cutoff (Max) :
- 20nA
- Length :
- 2.9mm
- Weight :
- 30mg
- Power Dissipation :
- 350mW
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Min Operating Temperature :
- -55°C
- Width :
- 1.3mm
- RoHS Status :
- RoHS Compliant
- Frequency :
- 100MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Collector Emitter Saturation Voltage :
- 700mV
- Max Operating Temperature :
- 150°C
- Datasheets
- BCW66G
NPN -55°C~150°C TJ 20nA 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW66G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 45V volts.SOT-23-3 is the supplier device package for this product.This device displays a 45V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 1A volts.
BCW66G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of SOT-23-3
BCW66G Applications
There are a lot of ON Semiconductor
BCW66G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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