BCW65CLT1G

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Mfr.Part #
BCW65CLT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 32V 0.8A SOT23-3
Stock
84
In Stock :
84

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Height :
1.11mm
Turn Off Time-Max (toff) :
400ns
Peak Reflow Temperature (Cel) :
260
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
REACH SVHC :
No SVHC
Width :
1.4mm
Surface Mount :
yes
Published :
2005
Collector Emitter Voltage (VCEO) :
32V
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
hFE Min :
80
Base Part Number :
BCW65
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Length :
3.04mm
Polarity/Channel Type :
NPN
Lead Free :
Lead Free
Power Dissipation :
300mW
Number of Terminations :
3
Number of Pins :
3
Pin Count :
3
Radiation Hardening :
No
Number of Elements :
1
Voltage - Rated DC :
32V
Collector Emitter Saturation Voltage :
700mV
Factory Lead Time :
2 Weeks
Max Power Dissipation :
225mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 100mA 1V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Transistor Element Material :
SILICON
Frequency :
100MHz
ECCN Code :
EAR99
Terminal Position :
Dual
Current - Collector Cutoff (Max) :
20nA
Gain Bandwidth Product :
100MHz
Current Rating :
800mA
Pbfree Code :
yes
Transistor Type :
NPN
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Emitter Base Voltage (VEBO) :
5V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transition Frequency :
100MHz
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
32V
Terminal Finish :
Tin (Sn)
Max Collector Current :
800mA
Time@Peak Reflow Temperature-Max (s) :
40
Collector Base Voltage (VCBO) :
60V
Max Breakdown Voltage :
32V
Datasheets
BCW65CLT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi BCW65CLT1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:BCW65, Mounting Type:Surface Mount, Number of Terminations:3, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, BCW65CLT1G pinout, BCW65CLT1G datasheet PDF, BCW65CLT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BCW65CLT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BCW65CLT1G


NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BCW65CLT1G Overview


This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 800mA volts is possible.

BCW65CLT1G Features


the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz


BCW65CLT1G Applications


There are a lot of ON Semiconductor
BCW65CLT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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