BCW65CLT1
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- Mfr.Part #
- BCW65CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.8A SOT23-3
- Stock
- 18,581
- In Stock ：
- 18,581
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn Off Time-Max (toff) :
- 400ns
- Current Rating :
- 800mA
- Base Part Number :
- BCW65
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Published :
- 2005
- Voltage - Rated DC :
- 32V
- Power Dissipation :
- 300mW
- Max Breakdown Voltage :
- 32V
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 32V
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 225mW
- Number of Elements :
- 1
- Width :
- 1.4mm
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 80
- Number of Terminations :
- 3
- Max Collector Current :
- 800mA
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 3.04mm
- Transistor Type :
- NPN
- Pin Count :
- 3
- Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 700mV
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 100MHz
- Height :
- 1.11mm
- Collector Emitter Voltage (VCEO) :
- 32V
- Current - Collector Cutoff (Max) :
- 20nA
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Datasheets
- BCW65CLT1
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW65CLT1G Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 800mA volts is possible.
BCW65CLT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW65CLT1G Applications
There are a lot of ON Semiconductor
BCW65CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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