BCW65ALT1G
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- Mfr.Part #
- BCW65ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.8A SOT23-3
- Stock
- 3,992
- In Stock ：
- 3,992
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Published :
- 2005
- Max Breakdown Voltage :
- 32V
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- Base Part Number :
- BCW65
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 32V
- Max Collector Current :
- 800mA
- Turn Off Time-Max (toff) :
- 400ns
- Width :
- 2.64mm
- Length :
- 3.04mm
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 35
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 225mW
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 20nA
- Pin Count :
- 3
- Height :
- 1.11mm
- Current Rating :
- 800mA
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 700mV
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 32V
- Voltage - Rated DC :
- 32V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Base Voltage (VCBO) :
- 60V
- Datasheets
- BCW65ALT1G
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW65ALT1G Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 800mA volts is possible.
BCW65ALT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW65ALT1G Applications
There are a lot of ON Semiconductor
BCW65ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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