BCW65ALT1
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- Mfr.Part #
- BCW65ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.8A SOT23-3
- Stock
- 43,776
- In Stock ：
- 43,776
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 700mV
- Contact Plating :
- Tin
- Turn Off Time-Max (toff) :
- 400ns
- Collector Emitter Voltage (VCEO) :
- 32V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2005
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Frequency :
- 100MHz
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 60V
- Pin Count :
- 3
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Width :
- 2.64mm
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Emitter Breakdown Voltage :
- 32V
- Max Breakdown Voltage :
- 32V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Lead Free :
- Lead Free
- Max Collector Current :
- 800mA
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Max Power Dissipation :
- 225mW
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 300mW
- Number of Pins :
- 3
- Current Rating :
- 800mA
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BCW65
- Height :
- 1.11mm
- Voltage - Rated DC :
- 32V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 3.04mm
- hFE Min :
- 35
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 2 Weeks
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 20nA
- Datasheets
- BCW65ALT1
NPN -55°C~150°C TJ 20nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW65ALT1G Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 32V volts can be used.A maximum collector current of 800mA volts is possible.
BCW65ALT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 100MHz
BCW65ALT1G Applications
There are a lot of ON Semiconductor
BCW65ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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