BCW61D,215
- Mfr.Part #
- BCW61D,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR PNP 32V 100MA SOT23
- Stock
- 58,488
- In Stock :
- 58,488
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Published :
- 2002
- Series :
- Automotive, AEC-Q101
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 380 @ 2mA 5V
- Transistor Element Material :
- SILICON
- Current - Collector (Ic) (Max) :
- 100mA
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 4 Weeks
- Base Part Number :
- BCW61
- HTS Code :
- 8541.21.00.95
- Surface Mount :
- yes
- Voltage - Collector Emitter Breakdown (Max) :
- 32V
- Power - Max :
- 250mW
- Turn Off Time-Max (toff) :
- 800ns
- VCEsat-Max :
- 0.55 V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Additional Feature :
- LOW NOISE
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Frequency - Transition :
- 100MHz
- JESD-30 Code :
- R-PDSO-G3
- Turn On Time-Max (ton) :
- 150ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BCW61D,215
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW61D,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 380 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 550mV @ 1.25mA, 50mA.Parts of this part have transition frequencies of 100MHz.This device displays a 32V maximum voltage - Collector Emitter Breakdown.
BCW61D,215 Features
the DC current gain for this device is 380 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
a transition frequency of 100MHz
BCW61D,215 Applications
There are a lot of Nexperia USA Inc.
BCW61D,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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