BCW61C
- Mfr.Part #
- BCW61C
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.1A SOT23
- Stock
- 2,262
- In Stock :
- 2,262
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 32V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Series :
- Automotive, AEC-Q101
- Published :
- 2009
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 250mW
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 32V
- Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Terminal Form :
- Gull wing
- Base Part Number :
- BCW61
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 32V
- Gain Bandwidth Product :
- 100MHz
- Additional Feature :
- LOW NOISE
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 32V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn Off Time-Max (toff) :
- 800ns
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Max Power Dissipation :
- 250mW
- Transition Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Datasheets
- BCW61C

PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW61C,235 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 2mA 5V.When VCE saturation is 550mV @ 1.25mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 32V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BCW61C,235 Features
the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW61C,235 Applications
There are a lot of Nexperia USA Inc.
BCW61C,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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